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Home page/Core Facilities/CEITEC Nano Research Infrastructure/E-beam writer RAITH150 Two

E-beam writer RAITH150 Two

Name: E-beam writer RAITH150 Two
Technology / Methodology: Nanolitography infrastructure
Location: CEITEC Brno University of Technology
Instrument description: Raith 150 Two is high resolution low voltage electron beam lithography (EBL) and metrology system. It is suitable for research and development of MEMS, micro and nanoelectronic, plasmonic, photonic systems and integrated optical devices. It comes with sample holders capable of mounting up to 6" substrate. The fabrication of 20 nm structures is guaranteed, while it is possible to write structures down to 10 nm in size. The system also contains FBMS (fixed beam moving stage) module for writing of long continuous patterns without stitching errors, and proximity effect correction SW package is available for optimized writing of near objects. Raith 150 Two is equipped with ultra high resolution Carl-Zeiss Gemini electron optics system. SEM image is recorded with help of InLens and SE detectors with resolution of 1 – 2 nm at most acceleration voltages. The range of voltages is 0,3 – 30 kV and the user can select the apertures to control the beam current. High precision writing is possible due to laser interferometric stage with the lateral movement resolution of 2 nm and large scale Z travel. This EBL system is suitable for long, time demanding exposures also thanks to its split room setup, which ensures environmental isolation together with temperature stabilization. Sample requirements ================= Composition: no material limitation, sample must be solid, very flat, thin, and of orthogonal or rounded shape best Sample size: minimum size is not limited, universal sample holder mounts up to 4" substrates, other holders are available for 6" substrates, 5" and 7" masks
Research group: CF: CEITEC Nano

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