Ondřej Caha, Ph.D.

2017

• WANG, CN; CAHA, O; MUNZ, F; KOSTELNIK, P; NOVAK, T; HUMLICEK, J, 2017:Mid-infrared ellipsometry, Raman and X-ray diffraction studies of AlxGa1-xN/AlN/Si structures. APPLIED SURFACE SCIENCE 421 , p. 859 - 865.

2016

• AKRAP, A; HAKL, M; TCHOUMAKOV, S; CRASSEE, I; KUBA, J; GOERBIG, MO; HOMES, CC; CAHA, O; NOVAK, J; TEPPE, F; DESRAT, W; KOOHPAYEH, S; WU, L; ARMITAGE, NP; NATEPROV, A; ARUSHANOV, E; GIBSON, QD; CAVA, RJ; VAN DER MAREL, D; PIOT, BA; FAUGERAS, C; MARTINEZ, G; POTEMSKI, M; ORLITA, M, 2016:Magneto-Optical Signature of Massless Kane Electrons in Cd3As2. PHYSICAL REVIEW LETTERS 117 (13)
• GABLECH, I; SVATOS, V; CAHA, O; HRABOVSKY, M; PRASEK, J; HUBALEK, J; SIKOLA, T, 2016:Preparation of (001) preferentially oriented titanium thin films by ion-beam sputtering deposition on thermal silicon dioxide. JOURNAL OF MATERIALS SCIENCE 51 (7), p. 3329 - 3336.
• SANCHEZ-BARRIGA, J; VARYKHALOV, A; SPRINGHOLZ, G; STEINER, H; KIRCHSCHLAGER, R; BAUER, G; CAHA, O; SCHIERLE, E; WESCHKE, E; UNAL, AA; VALENCIA, S; DUNST, M; BRAUN, J; EBERT, H; MINAR, J; GOLIAS, E; YASHINA, LV; NEY, A; HOLY, V; RADER, O, 2016:Nonmagnetic band gap at the Dirac point of the magnetic topological insulator (Bi1-xMnx)(2)Se-3. NATURE COMMUNICATIONS 7

2015

• RUZICKA, J; CAHA, O; HOLY, V; STEINER, H; VOLOBUIEV, V; NEY, A; BAUER, G; DUCHON, T; VELTRUSKA, K; KHALAKHAN, I; MATOLIN, V; SCHWIER, EF; IWASAWA, H; SHIMADA, K; SPRINGHOLZ, G, 2015:Structural and electronic properties of manganese-doped Bi2Te3 epitaxial layers. NEW JOURNAL OF PHYSICS 17

2014

• STEINER, H; VOLOBUEV, V; CAHA, O; BAUER, G; SPRINGHOLZ, G; HOLY, V, 2014:Structure and composition of bismuth telluride topological insulators grown by molecular beam epitaxy. JOURNAL OF APPLIED CRYSTALLOGRAPHY 47 , p. 1889 - 1900.

2013

• CAHA, O; KOSTELNIK, P; SIK, J; KIM, YD; HUMLICEK, J, 2013:Lattice constants and optical response of pseudomorph Si-rich SiGe:B. APPLIED PHYSICS LETTERS 103 (20)

2012

• MEDUNA, M; RUZICKA, J; CAHA, O; BURSIK, J; SVOBODA, M, 2012:Precipitation in silicon wafers after high temperature preanneal studied by X-ray diffraction methods. PHYSICA B-CONDENSED MATTER 407 (15), p. 3002 - 3005.

Office 1:

Masarykova univerzita - CEITEC MU Kotlářská 267/2, Brno, 611 37, office pav. 09/02008