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+420 54949 4505 |
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+420 54949 5980, +420 54949 1447 |
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Research areas
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Electronic and vibronic structure of materials and metamaterials
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Optical spectroscopy and polarimetry of micro- and nanostructures
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X-ray analysis of micro- and nanostructures
Main objectives
Investigation of the functional properties of nanostructures
Specification and optimization of the functional properties of nanostructures for nanoelectronics, nanophotonics and (bio)sensing, their correlation with geometrical/structural parameters of nanostructures and operational parameters.
Novel and unique properties of nanostructures not observable in conventional materials and microstructures which open ways to qualitatively new applications.
Physical properties of bulk materials, mainly those involved in the nanostructures.
Content of research
Investigation of the functional properties of nanostructures
The main goal is to find the correlation between the properties and the geometrical and structural parameters of nanostructures and to use this knowledge for feedback in the technology of their preparation and for various applications.
Self-assembled semiconductor nanostructures, fundamental electronic properties
Self-assembling processes in nanostructures of III-V semiconductors (e.g. self-assembled rings of InAs in the matrix of GaAs). A study of electronic structures aimed at optimizing their properties with respect to optoelectronic and transport applications, and analysis of the influence of capping layers.
Oxide superconductors and magnetics, transport at optical frequencies
Deposition of layered systems, nanostructures in systems of superconductors/magnetics.
An experimental and theoretical study of electronic and vibrational structures. Optimizing them with respect to sensor applications. Experimental determination of the electrical, thermal and magnetic properties of high-temperature superconductors and superlattices with respect to their structural characterization and chemical composition.
CURRENT RESEARCH INFRASTRUCTURE
Clean room facility (class 100–1000, 120 m2) for semiconductor technologies (≈ 3 μm) – preferentially for education purposes; optical spectroscopy (transmission, reflection and ellipsometry) in a wide spectral region (FIR – UV) including thermal dependences; in situ ellipsometry at high temperatures; transport properties measurements (conductance and Hall effect, life-time determination of carriers from photoconductivity); SPM microscopy.
New equipment (belonging to CEITEC in core facilities)
Infrared spectroscopy and spectro-microscopy: Bruker Vertex 80v spectrometer (spectral resolution 0.2 cm-1, spectral range 20-15 000 cm-1, transmission, reflection at 10 deg); Bruker Hyperion 3000 infrared microscope (single element MCT detector, spectral range 600-6000 cm-1, array MCT detector 128×128 pixels, spectral range 800-4000 cm-1, objectives for reflection and transmission 15x, 36x, ATR, grazing incidence).
Spectroscopic ellipsometry: Woollam VASE NIR-UV ellipsometer (spectral range 193-2500 nm, rotating compensator, microfocus 100 and 200 micrometers); Woollam IR-VASE MIR ellipsometer (spectral range 1.7 to 30 micrometers, rotating compensator).
List of available equipment can be found HERE.
